Self-compensation in Mg doped p-type GaN grown by MOCVD - Concepedia

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Self-compensation in Mg doped p-type GaN grown by MOCVD

134

Citations

5

References

1998

Year

H. Obloh, K. H. Bachem, U. Kaufmann, M. Kunzer, Matthias Maier, A. Ramakrishnan, P. Schlotter

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceOptoelectronicsP-type Gan

References

	Year	Citations

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