Statistics
Publications
113
Citations
4.2K
H-Index
36
Active since
1975
J.L. Weyher is an author at Institute of High Pressure Physics specializing in materials science, materials engineering, and semiconductor materials.
Publications per year
1975–2022
113
113
Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
M. Seelmann‐Eggebert, J.L. Weyher, H. Obloh et al. · Applied Physics Letters · 1997 · 185 citations
Natural Sciences, Materials Engineering, Materials Science +17
Chemical polishing of bulk and epitaxial GaN
J.L. Weyher, S. Müller, I. Grzegory et al. · Journal of Crystal Growth · 1997 · 172 citations
Recent advances in defect-selective etching of GaN
J.L. Weyher, Paul D. Brown, Jean‐Luc Rouvière et al. · Journal of Crystal Growth · 2000 · 133 citations
1–5 of 113