Recent advances in defect-selective etching of GaN

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

C. Youtsey, Lucia Romano, I. Adesida · Applied Physics Letters · 1998 · 228 citations

Engineering, Materials Engineering, Materials Science +17

Crystallographic wet chemical etching of GaN

D. A. Stocker, E. Fred Schubert, Joan M. Redwing · Applied Physics Letters · 1998 · 218 citations

Engineering, Materials Engineering, Materials Science +17

Highly anisotropic photoenhanced wet etching of n-type GaN

C. Youtsey, I. Adesida, G. E. Bulman · Applied Physics Letters · 1997 · 208 citations

Engineering, Materials Engineering, Materials Science +17

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Tetsuya Takeuchi, Shigeo Yamaguchi et al. · Japanese Journal of Applied Physics · 1998 · 192 citations

Engineering, Materials Engineering, Materials Science +13

Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

Jean‐Luc Rouvière, J.L. Weyher, M. Seelmann‐Eggebert et al. · Applied Physics Letters · 1998 · 160 citations

Engineering, Materials Engineering, Materials Science +17