Etch-induced Defects
Etch-Induced Defects is a phenomenon in semiconductor manufacturing that refers to structural imperfections or anomalies in thin films caused directly by the physical or chemical processes employed during etching, distinguishing it from defects originating from materials, deposition, or external contamination.
469
Publications
16.6K
Citations
1.8K
Authors
448
Institutions
Publications per year
2017–2026
54
Parents
469
Etching Mechanism of Monoatomic Aluminum Layers during MXene Synthesis
Yong-Jae Kim, Seon Joon Kim, Darae Seo et al. · Chemistry of Materials · 2021 · 277 citations
Natural Sciences, Materials Engineering, Materials Science +16
1–5 of 469
1.8K
11
h-index
11
h-index
6
h-index
6
h-index
5
h-index
1–5 of 1.8K
448

Centre National de la Recherche Scientifique
Paris, France
10 h-index
45 publications
1.9K citations

Chinese Academy of Sciences
Beijing, China
10 h-index
49 publications
938 citations
University of Florida
Gainesville, United States
10 h-index
43 publications
1.4K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
9 h-index
27 publications
613 citations
Sandia National Laboratories
Albuquerque, United States
9 h-index
38 publications
1.3K citations
Institute of High Pressure Physics
Warsaw, Poland
9 h-index
21 publications
1K citations

Radboud University Nijmegen
Nijmegen, The Netherlands
9 h-index
14 publications
713 citations

Polish Academy of Sciences
Warsaw, Poland
9 h-index
25 publications
1.3K citations
1–8 of 448
44 publications · 1.8K citations
22
h-index
JES · 43 publications · 2.4K citations
22
h-index
27 publications · 1.5K citations
20
h-index
36 publications · 1.2K citations
18
h-index
JJAP · 37 publications · 1.3K citations
16
h-index
1–5