Etch-induced Defects

Etch-Induced Defects is a phenomenon in semiconductor manufacturing that refers to structural imperfections or anomalies in thin films caused directly by the physical or chemical processes employed during etching, distinguishing it from defects originating from materials, deposition, or external contamination.

469

Publications

16.6K

Citations

1.8K

Authors

448

Institutions

Publications per year

2017–2026

54

Authors

1.8K

  1. JW
    J.L. Weyher

    Institute of High Pressure Physics, Poland

    11 publications · 496 citations

    11

    h-index

  2. SJ
    S. J. Pearton

    University of Florida, United States

    11 publications · 375 citations

    11

    h-index

  3. RJ
    R. J. Shul

    Sandia National Laboratories, United States

    6 publications · 211 citations

    6

    h-index

  4. RC
    Rebecca Cheung

    University of Edinburgh, United Kingdom

    6 publications · 103 citations

    6

    h-index

  5. SW
    S. W. Pang

    University of Michigan, United States

    5 publications · 89 citations

    5

    h-index

1–5 of 1.8K

Venues

  1. Journal of Applied Physics

    44 publications · 1.8K citations

    22

    h-index

  2. Journal of The Electrochemical Society

    JES · 43 publications · 2.4K citations

    22

    h-index

  3. Applied Physics Letters

    27 publications · 1.5K citations

    20

    h-index

  4. Journal of Crystal Growth

    36 publications · 1.2K citations

    18

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 37 publications · 1.3K citations

    16

    h-index

1–5