R. J. Shul

GaN: Processing, defects, and devices

S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations

Engineering, Materials Engineering, Materials Science +17

Cross-section measurements for electron-impact ionization of atoms

Robert S. Freund, Robert C. Wetzel, R. J. Shul et al. · Physical Review A · 1990 · 372 citations

Natural Sciences, Chemistry, Nuclear Physics +10

AlGaN/GaN quantum well ultraviolet light emitting diodes

Jung Han, Mary H. Crawford, R. J. Shul et al. · Applied Physics Letters · 1998 · 252 citations

Engineering, Electrical Engineering, Materials Engineering +17

Inductively coupled plasma etching of GaN

R. J. Shul, G McClellan, S.A. Casalnuovo et al. · Applied Physics Letters · 1996 · 214 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical effects of plasma damage in p-GaN

X. A. Cao, S. J. Pearton, A. P. Zhang et al. · Applied Physics Letters · 1999 · 203 citations

Engineering, Electrical Engineering, Physics +17