A. P. Zhang

Electrical effects of plasma damage in p-GaN

X. A. Cao, S. J. Pearton, A. P. Zhang et al. · Applied Physics Letters · 1999 · 202 citations

Electrical Engineering, Engineering, High Voltage Engineering +6

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2001 · 92 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +9

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Jung Han, Albert G. Baca, R. J. Shul et al. · Applied Physics Letters · 1999 · 87 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Effects of interfacial oxides on Schottky barrier contacts to <i>n</i>- and <i>p</i>-type GaN

X. A. Cao, S. J. Pearton, G. Dang et al. · Applied Physics Letters · 1999 · 86 citations

Materials Science, Schottky Barrier Contacts, Electrical Engineering +12

Vertical and lateral GaN rectifiers on free-standing GaN substrates

A. P. Zhang, J. W. Johnson, B. Luo et al. · Applied Physics Letters · 2001 · 69 citations

Electrical Engineering, Rectifier Geometry, Engineering +11