F. Ren

GaN: Processing, defects, and devices

S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations

Wide-bandgap Semiconductor, Electrical Engineering, Point Defects +11

Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton, C. R. Abernathy, M. E. Overberg et al. · Journal of Applied Physics · 2002 · 1K citations

Magnetic Properties, Engineering, Experimental Realization +21

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

S. J. Pearton, F. Ren, Marko J. Tadjer et al. · Journal of Applied Physics · 2018 · 601 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

ZnO nanowire growth and devices

Young-Woo Heo, D. P. Norton, Li‐Chia Tien et al. · Materials Science and Engineering R Reports · 2004 · 574 citations

Nanoscale System, Engineering, Nanomaterials +6

Hydrogen-selective sensing at room temperature with ZnO nanorods

H. T. Wang, B. S. Kang, F. Ren et al. · Applied Physics Letters · 2005 · 541 citations

Materials Science, Hydrogen Energy Technology, Engineering +14