Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

K. Ip, M. E. Overberg, Young-Woo Heo, +7

Applied Physics Letters

Hydrogen Energy TechnologyEngineeringHydrogen TransitionOxide ElectronicsHydrogen Incorporation Depths +8

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, Jong Su KIM, +10

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringSurface Science +9

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim, +13

Applied Physics Letters

SemiconductorsOxide HeterostructuresElectrical EngineeringElectronic DevicesGate Oxide +12

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren, +11

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +11

Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor

J. W. Johnson, B. Luo, F. Ren, +7

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringElemental GdEngineeringGan Mosfet +5

Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

Jihyun Kim, R. Mehandru, B. Luo, +5

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringSi+ ImplantationEngineering +6

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

J. W. Johnson, R. Mehandru, B. Luo, +6

physica status solidi (a)

Materials ScienceOxide HeterostructuresElectrical EngineeringWide-bandgap SemiconductorEngineering +9

Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren, +9

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +10

AlGaN/GaN HEMT based liquid sensors

R. Mehandru, B. Luo, B. S. Kang, +6

Solid-State Electronics

Electrical EngineeringEngineeringSensorsApplied PhysicsAluminum Gallium Nitride +4

Inversion behavior in Sc2O3/GaN gated diodes

Jihyun Kim, R. Mehandru, B. Luo, +5

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +9