B. Luo

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

K. Ip, M. E. Overberg, Young-Woo Heo et al. · Applied Physics Letters · 2003 · 211 citations

Hydrogen Energy Technology, Engineering, Hydrogen Transition +10

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, Jong Su KIM et al. · Applied Physics Letters · 2002 · 173 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim et al. · Applied Physics Letters · 2003 · 141 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +14

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2001 · 116 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor

J. W. Johnson, B. Luo, F. Ren et al. · Applied Physics Letters · 2000 · 97 citations

Wide-bandgap Semiconductor, Electrical Engineering, Elemental Gd +7