B. Luo

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

K. Ip, M. E. Overberg, Young-Woo Heo et al. · Applied Physics Letters · 2003 · 211 citations

Natural Sciences, Materials Science, Physics +15

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, Jong Su KIM et al. · Applied Physics Letters · 2002 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim et al. · Applied Physics Letters · 2003 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

B. Luo, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2001 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor

J. W. Johnson, B. Luo, F. Ren et al. · Applied Physics Letters · 2000 · 98 citations

Engineering, Materials Engineering, Materials Science +17