R. Mehandru

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 532 citations

Engineering, Computer Engineering, Electrical Engineering +16

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, Jong Su KIM et al. · Applied Physics Letters · 2002 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim et al. · Applied Physics Letters · 2003 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

Jihyun Kim, R. Mehandru, B. Luo et al. · Applied Physics Letters · 2002 · 98 citations

Engineering, Materials Engineering, Materials Science +17

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

J. W. Johnson, R. Mehandru, B. Luo et al. · physica status solidi (a) · 2001 · 87 citations · Full text

Engineering, Materials Engineering, Materials Science +17