Applied Physics Letters · 1999 · 87 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDopingIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresWide-bandgap SemiconductorsCurrent GainGain EnhancementGallium NitrideHeterojunction Bipolar TransistorsIonizationMetalorganic Chemical Vapor DepositionSecondary Ion Mass SpectrometrySemiconductor Heterojunctions
A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si doping in the emitter and collector regions was grown by metalorganic chemical vapor deposition on c-axis Al2O3. Secondary ion mass spectrometry measurements showed no increase in the O concentration (2–3×1018 cm−3) in the AlGaN emitter and fairly low levels of C (∼4–5×1017 cm−3) throughout the structure. Due to the nonohmic behavior of the base contact at room temperature, the current gain of large area (∼90 μm diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the Mg acceptors in the base, and current gains of ∼10 were obtained at 300 °C.
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High Al-content AlGaN/GaN MODFETs for ultrahigh performance
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