Applied Physics Letters · 2001 · 93 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationMetal-semiconductor ContactsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown MechanismsBreakdown VoltageGallium Nitride Power DevicesGallium Nitride Power ElectronicsOhmic ContactsOhmic MaterialsRectifying ContactsSchottky Barrier Diodes
Al x Ga 1−x N (x=0–0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ⩽9.67×105 V cm−1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94–268 MW cm−2 for all the devices.
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AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
M.A. Khan, X. Hu, G. Sumin et al. · IEEE Electron Device Letters · 2000 · 383 citations
GaN based transistors for high power applications
M. S. Shur · Solid-State Electronics · 1998 · 270 citations