N. B. Smirnov - Concepedia

Author

N. B. Smirnov

Also Known As

N B Smirnov, N. B. Smirnov, N. Smirnov, N.B Smirnov, N.B. Smirnov, Nick B. Smirnov, Nickolai B. Smirnov, Nikolai B Smirnov, Nikolai B. Smirnov, Nikolai Smirnov

261

Publications

5.6K

Citations

H-Index

Concepts

All Affiliations

University of Florida Ural Institute of Metals National University of Science and Technology Jeonbuk National University Institute of Microelectronics Technology and High Purity Materials

About

N. B. Smirnov is an author at University of Florida specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	40	150	4.9K
2	Applied Physics	40	155	5.1K
3	Natural Sciences	11	11	390
4	Chemistry	7	7	308
5	Chemical Engineering	5	5	221

N. B. Smirnov

165

Publications

5.3K

Citations

H-Index

Page 1

	Year	Citations
Electrical characteristics of Au and Ag Schottky contacts on n-ZnO A. Y. Polyakov, N. B. Smirnov, V. I. Vdovin, Applied Physics Letters Materials ScienceIi-vi SemiconductorElectrical EngineeringBulk N-zno CrystalsEngineering	2003	187
Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, Applied Physics Letters Deep ElectronEngineeringDefect ToleranceElectrical PropertiesIon Implantation	2018	143
Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, APL Materials Materials ScienceSemiconductorsWide-bandgap SemiconductorEngineeringPhysics	2018	116
Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorSemiconductor TechnologyElectronic DevicesEngineering	1998	106
Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films A. Y. Polyakov, N. B. Smirnov, A. S. Usikov, Solid-State Electronics PhotoluminescenceEngineeringPhysicsOptical PropertiesYellow Luminescence Band	1998	105
Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, Applied Physics Letters Materials ScienceChemical EngineeringEngineeringNuclear PhysicsCharge Carrier Removal	2018	96
Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage A. P. Zhang, J. W. Johnson, F. Ren, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringLateral Geometry	2001	92
Properties of Si donors and persistent photoconductivity in AlGaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Solid-State Electronics EngineeringSi DonorsApplied PhysicsAluminum Gallium NitrideCategoryiii-v Semiconductor	1998	87
Proton implantation effects on electrical and recombination properties of undoped ZnO A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2003	80
Electrical and optical properties of Cr and Fe implanted <i>n</i>-GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringOptical MaterialsDeep Levels	2003	74

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