A. S. Usikov

Statistics

Publications

Citations

601

H-Index

Active since

1982

Affiliations

Physico-Technical Institute(Current)

Russian Academy of Sciences

Ural Institute of Metals

Ioffe Institute

Karlsruhe Institute of Technology

A. S. Usikov is an author at Physico-Technical Institute specializing in materials science, electronic materials, and gallium nitride (gan) materials.

Publications per year

1982–2007

Publications

Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

A. Y. Polyakov, N. B. Smirnov, A. S. Usikov et al. · Solid-State Electronics · 1998 · 105 citations

Engineering, Materials Engineering, Materials Science +17

Effects of proton implantation on electrical and recombination properties of n-GaN

A. Y. Polyakov, A. S. Usikov, B. Theys et al. · Solid-State Electronics · 2000 · 69 citations

Engineering, Materials Engineering, Materials Science +14

The influence of phonons on the optical properties of GaN

D. Y. Song, Madivala G. Basavaraj, S. A. Nikishin et al. · Journal of Applied Physics · 2006 · 55 citations

Natural Sciences, Materials Science, Physics +17

Point defects in gamma-irradiated n-GaN

V. V. Emtsev, V. Yu. Davydov, W. V. Lundin et al. · Semiconductor Science and Technology · 2000 · 45 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

N. M. Shmidt, D. V. Davydov, V. V. Emtsev et al. · physica status solidi (b) · 1999 · 39 citations

Engineering, Materials Engineering, Materials Science +17

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