W. V. Lundin

Quantum dot origin of luminescence in InGaN-GaN structures

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann et al. · Physical review. B, Condensed matter · 2002 · 108 citations

Photonics, Photoluminescence, Engineering +11

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

I. L. Krestnikov, W. V. Lundin, A. V. Sakharov et al. · Applied Physics Letters · 1999 · 81 citations

Photonics, Possible Vertical Lasing, Engineering +11

Effects of proton implantation on electrical and recombination properties of n-GaN

A. Y. Polyakov, A. S. Usikov, B. Theys et al. · Solid-State Electronics · 2000 · 68 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +7

Hydrogen effects in III-nitride MOVPE

E.V. Yakovlev, A.S. Segal, A.V. Lobanova et al. · Journal of Crystal Growth · 2008 · 49 citations

Engineering, Hydrogen Transition, Hydrogen Effects +4

Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity

G. É. Shaĭbler, A. S. Yaroshevich, S.V. Shevelev et al. · Physics of the Solid State · 2004 · 48 citations