E.V. Yakovlev - Concepedia

Author

E.V. Yakovlev

Aixtron (Germany)

Also Known As

E. V. Yakovlev, E. Yakovlev, E.V. Yakovlev, Eugene V. Yakovlev, Eugene YAKOVLEV, Eugene Yakovlev, Yakovlev, E.V.

Publications

820

Citations

H-Index

Concepts

All Affiliations

Aixtron (Germany)Friedrich-Alexander-Universität Erlangen-Nürnberg Physico-Technical Institute Forschungszentrum Jülich Russian Academy of Sciences

About

E.V. Yakovlev is an author at Aixtron (Germany) specializing in engineering, applied physics, and materials engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	563
2	Applied Physics	13	16	445
3	Electrical Engineering	9	9	203
4	Chemistry	5	5	146
5	Chemical Engineering	3	3	81

E.V. Yakovlev

Publications

744

Citations

H-Index

Page 1

	Year	Citations
Novel approach to simulation of group-III nitrides growth by MOVPE S. Yu. Karpov, V. G. Prokofyev, E.V. Yakovlev, MRS Internet Journal of Nitride Semiconductor Research	1999	72
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor E.V. Yakovlev, S. Yu. Karpov, Yu.N. Makarov, MRS Internet Journal of Nitride Semiconductor Research	1999	58
Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops A.V. Lobanova, A. L. Kolesnikova, S. Yu. Karpov, Applied Physics Letters Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringCritical ThicknessEngineering	2013	55
Hydrogen effects in III-nitride MOVPE E.V. Yakovlev, A.S. Segal, A.V. Lobanova, Journal of Crystal Growth EngineeringHydrogen TransitionHydrogen EffectsApplied PhysicsHydrogen	2008	49
On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds E.V. Yakovlev, S. Yu. Karpov, Yu.N. Makarov Journal of Crystal Growth Materials EngineeringIi-vi SemiconductorEngineeringApplied PhysicsChemistry	2001	48
Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors M. Dauelsberg, Conor Martin, H. Protzmann, Journal of Crystal Growth Chemical EngineeringEngineeringPlanetary ReactorsApplied PhysicsIii-nitride Movpe	2006	45
Growth conditions and surface morphology of AlN MOVPE A.V. Lobanova, E.V. Yakovlev, S. B. Thapa, Journal of Crystal Growth Materials ScienceSurface CharacterizationAluminium NitrideEngineeringCrystal Growth Technology	2008	45
Strain effects on indium incorporation and optical transitions in green‐light InGaN heterostructures of different orientations M. V. Durnev, Alexander Omelchenko, E.V. Yakovlev, physica status solidi (a) Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesDifferent Orientations	2011	41
Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity M. V. Durnev, Alexander Omelchenko, E.V. Yakovlev, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsStrained InganEngineeringArbitrary Polarity	2010	38
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, Journal of Crystal Growth PhotonicsQuantum ScienceElectrical EngineeringEngineeringSolid-state Lighting	2010	35

Page 1