E.V. Yakovlev

Novel approach to simulation of group-III nitrides growth by MOVPE

S. Yu. Karpov, V. G. Prokofyev, E.V. Yakovlev et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 72 citations · Full text

Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

E.V. Yakovlev, S. Yu. Karpov, Yu.N. Makarov et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 58 citations · Full text

Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops

A.V. Lobanova, A. L. Kolesnikova, S. Yu. Karpov et al. · Applied Physics Letters · 2013 · 55 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14

Hydrogen effects in III-nitride MOVPE

E.V. Yakovlev, A.S. Segal, A.V. Lobanova et al. · Journal of Crystal Growth · 2008 · 49 citations

Engineering, Hydrogen Transition, Hydrogen Effects +4

On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds

E.V. Yakovlev, S. Yu. Karpov, Yu.N. Makarov · Journal of Crystal Growth · 2001 · 48 citations

Materials Engineering, Ii-vi Semiconductor, Engineering +7