N. N. Ledentsov - Concepedia

Author

N. N. Ledentsov

Also Known As

J.-R. Kropp, L. Chorchos, Ledentsov, N. N., N Ledentsov, N Ledentsov Jr, N N Ledentsov, N. Ledentsov, N. Ledentsov Jr, N. N. LEDENTSOV, N. N. Ledentsov

382

Publications

9.1K

Citations

H-Index

Concepts

All Affiliations

Technische Universität Berlin Physico-Technical Institute Vertically Integrated Systems (Germany)Russian Academy of Sciences Ioffe Institute

About

N. N. Ledentsov is an author at Technische Universität Berlin specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	106	6.2K
2	Applied Physics	37	88	5.7K
3	Electrical Engineering	15	25	1.1K
4	Computer Engineering	10	15	418
5	Natural Sciences	2	2	69

N. N. Ledentsov

129

Publications

Citations

H-Index

Page 1

	Year	Citations
Low threshold, large <i> T <sub>o</sub> </i> injectionlaser emissionfrom (InGa)As quantum dots N. Kirstaedter, N. N. Ledentsov, Marius Grundmann, Electronics Letters	1994	805
InGaAs-GaAs quantum-dot lasers D. Bimberg, N. Kirstaedter, N. N. Ledentsov, IEEE Journal of Selected Topics in Quantum Electronics Optical PumpingPhotonicsQuantum PhotonicsEngineeringPhysics	1997	565
Quantum dot heterostructures: Fabrication, properties, lasers (Review) N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, Semiconductors	1998	350
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers N. Kirstaedter, Oliver G. Schmidt, N. N. Ledentsov, Applied Physics Letters PhotonicsQuantum ScienceQuantum PhotonicsEngineeringPhysics	1996	316
The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers Sasan Fathpour, Zetian Mi, P. Bhattacharya, Applied Physics Letters P-doped 1.3Categoryquantum ElectronicsQuantum PhotonicsAuger RecombinationEngineering	2004	246
Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers R.L. Sellin, Ch. Ribbat, Marius Grundmann, Applied Physics Letters EngineeringLaser ScienceLaser ApplicationsLaser MaterialPeak Power	2001	229
Quantum-dot heterostructure lasers N. N. Ledentsov, Marius Grundmann, F. Heinrichsdorff, IEEE Journal of Selected Topics in Quantum Electronics Materials ScienceQuantum SciencePhotonicsQuantum PhotonicsEngineering	2000	224
Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment Marius Grundmann, N. N. Ledentsov, O. Stier, Applied Physics Letters Localized Excited StateEngineeringExcited Hole StatesSemiconductor NanostructuresIi-vi Semiconductor	1996	223
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, Physical review. B, Condensed matter Aluminium NitrideEngineeringElectronic PropertiesSemiconductor NanostructuresIi-vi Semiconductor	2000	207
Structural characterization of (In,Ga)As quantum dots in a GaAs matrix S. Ruvimov, P. Werner, K. Scheerschmidt, Physical review. B, Condensed matter Materials ScienceIi-vi SemiconductorMorphology EvolutionEngineeringPhysics	1995	204

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