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Low threshold, large <i> T <sub>o</sub> </i> injectionlaser emissionfrom (InGa)As quantum dots

DOI

805

Citations

6

References

1994

Year

N. Kirstaedter, N. N. Ledentsov, Marius Grundmann, D. Bimberg, V.M. Ustinov, S. Ruvimov, M. V. Maximov, P. S. Kop’ev, Zh. I. Alfërov, Uwe Richter,
Electronics Letters

Abstract

Low threshold, large To injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry.

References

YearCitations

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