Applied Physics Letters · 2004 · 248 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsOptoelectronic DevicesQuantum DotsSemiconductor Device MaterialsSemiconductor LasersAuger RecombinationLasersOutput CharacteristicsQuantum Dot LasersQuantum Dot MaterialsTemperature Dependence Of Laser PerformanceThreshold Current Dynamics
Temperature invariant output slope efficiency and threshold current (T0=∞) in the temperature range of 5–75 °C have been measured for 1.3 μm p-doped self-organized quantum dot lasers. Similar undoped quantum dot lasers exhibit T0=69K in the same temperature range. A self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped lasers and to analyze the measured data. It is observed that Auger recombination in the dots plays an important role in determining the threshold current of the p-doped lasers.
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1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
O.B. Shchekin, D.G. Deppe · Applied Physics Letters · 2002 · 350 citations