A. R. Kovsh - Concepedia

Author

A. R. Kovsh

Physico-Technical Institute

Also Known As

A Kovsh, A R Kovsh, A. Kovsh, A. R. KOVSH, A. R. Kovsh, A.R Kovsh, A.R. Kovsh, Alexey Kovsh, Alexey R. Kovsh

268

Publications

7.4K

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Technische Universität Berlin Russian Academy of Sciences Innolume (Germany)Industrial Technology Research Institute

About

A. R. Kovsh is an author at Physico-Technical Institute specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	42	86	5.2K
2	Applied Physics	42	84	5.2K
3	Electrical Engineering	18	21	1.3K
4	Materials Engineering	2	2	82
5	Natural Sciences	1	1	69

A. R. Kovsh

125

Publications

6.8K

Citations

H-Index

Page 1

	Year	Citations
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm V. M. Ustinov, N. A. Maleev, A. E. Zhukov, Applied Physics Letters Optical MaterialsEngineeringLateral SizeOptoelectronic DevicesIngaas Quantum	1999	377
InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm James A. Lott, N. N. Ledentsov, V. M. Ustinov, Electronics Letters	2000	265
The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers Sasan Fathpour, Zetian Mi, P. Bhattacharya, Applied Physics Letters P-doped 1.3Categoryquantum ElectronicsQuantum PhotonicsAuger RecombinationEngineering	2004	246
Quantum dot lasers: breakthrough in optoelectronics D. Bimberg, Marius Grundmann, F. Heinrichsdorff, Thin Solid Films PhotonicsQuantum ScienceQuantum PhotonicsEngineeringPhysics	2000	212
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, Physical review. B, Condensed matter Aluminium NitrideEngineeringElectronic PropertiesSemiconductor NanostructuresIi-vi Semiconductor	2000	207
High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range N. N. Ledentsov, A. R. Kovsh, A. E. Zhukov, Electronics Letters	2003	161
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers S. S. Mikhrin, A. R. Kovsh, I. L. Krestnikov, Semiconductor Science and Technology PhotonicsElectrical EngineeringEngineeringLaser ScienceQuantum Device	2005	149
High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser Edik U. Rafailov, Maria Ana Cataluna, W. Sibbett, Applied Physics Letters Optical PumpingPhotonicsPulse GenerationQuantum ScienceEngineering	2005	147
InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency A. R. Kovsh, N. A. Maleev, A. E. Zhukov, Electronics Letters	2002	137
Strain engineering of self-organized InAs quantum dots F. Guffarth, R. Heitz, A. Schliwa, Physical review. B, Condensed matter EngineeringElectronic PropertiesSemiconductor NanostructuresSemiconductorsQuantum Dots	2001	135

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