A. R. Kovsh

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov, N. A. Maleev, A. E. Zhukov et al. · Applied Physics Letters · 1999 · 377 citations

Optical Materials, Engineering, Lateral Size +18

InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm

James A. Lott, N. N. Ledentsov, V. M. Ustinov et al. · Electronics Letters · 2000 · 265 citations

The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers

Sasan Fathpour, Zetian Mi, P. Bhattacharya et al. · Applied Physics Letters · 2004 · 246 citations · Full text

P-doped 1.3, Categoryquantum Electronics, Quantum Photonics +17

Quantum dot lasers: breakthrough in optoelectronics

D. Bimberg, Marius Grundmann, F. Heinrichsdorff et al. · Thin Solid Films · 2000 · 212 citations

Photonics, Quantum Science, Quantum Photonics +8

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik et al. · Physical review. B, Condensed matter · 2000 · 207 citations

Aluminium Nitride, Engineering, Electronic Properties +17