A. F. Tsatsul’nikov

Quantum dot lasers: breakthrough in optoelectronics

D. Bimberg, Marius Grundmann, F. Heinrichsdorff et al. · Thin Solid Films · 2000 · 212 citations

Natural Sciences, Electrical Engineering, Physics +12

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik et al. · Physical review. B, Condensed matter · 2000 · 208 citations

Engineering, Materials Engineering, Materials Science +17

1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decomposition

Yu. M. Shernyakov, D. A. Bedarev, E.Yu. Kondrat’eva et al. · Electronics Letters · 1999 · 132 citations

Engineering, Electrical Engineering, Materials Science +17

Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

A. E. Zhukov, A. R. Kovsh, N. A. Maleev et al. · Applied Physics Letters · 1999 · 131 citations

Engineering, Electrical Engineering, Materials Science +17

Quantum dot origin of luminescence in InGaN-GaN structures

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann et al. · Physical review. B, Condensed matter · 2002 · 110 citations

Engineering, Materials Engineering, Materials Science +17