B. V. Volovik

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov, N. A. Maleev, A. E. Zhukov et al. · Applied Physics Letters · 1999 · 377 citations

Optical Materials, Engineering, Lateral Size +18

InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm

James A. Lott, N. N. Ledentsov, V. M. Ustinov et al. · Electronics Letters · 2000 · 265 citations

Quantum dot lasers: breakthrough in optoelectronics

D. Bimberg, Marius Grundmann, F. Heinrichsdorff et al. · Thin Solid Films · 2000 · 212 citations

Photonics, Quantum Science, Quantum Photonics +8

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik et al. · Physical review. B, Condensed matter · 2000 · 207 citations

Aluminium Nitride, Engineering, Electronic Properties +17

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov et al. · IEEE Photonics Technology Letters · 1999 · 132 citations

Quantum Photonics, Optical Materials, Engineering +19