N. A. Maleev

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov, N. A. Maleev, A. E. Zhukov et al. · Applied Physics Letters · 1999 · 377 citations

Optical Materials, Engineering, Lateral Size +18

InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm

James A. Lott, N. N. Ledentsov, V. M. Ustinov et al. · Electronics Letters · 2000 · 265 citations

InAs/InGaAs/GaAs quantum dot lasers of 1.3  µm range with high (88%) differential efficiency

A. R. Kovsh, N. A. Maleev, A. E. Zhukov et al. · Electronics Letters · 2002 · 137 citations

InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gain

A. R. Kovsh, N. A. Maleev, A. E. Zhukov et al. · Journal of Crystal Growth · 2003 · 113 citations

Optical Pumping, Photonics, Engineering +6

1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

V. M. Ustinov, A. E. Zhukov, N. A. Maleev et al. · Journal of Crystal Growth · 2001 · 71 citations

Photonics, Engineering, Quantum Device +5