Electronics Letters · 2002 · 137 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsOptical SourcesOptoelectronic DevicesQuantum DotsSemiconductor Device MaterialsSemiconductor LasersCurrent DensityDifferential EfficiencyDifferential Quantum EfficiencyOptical GainOptical Gain In SemiconductorsOptical Gain MaterialsQuantum Dot LasersSemiconductor Quantum Dots
Multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 µm. A differential efficiency as high as 88% has been achieved in these lasers. An emission wavelength of 1.28 µm, threshold current density of 147 A/cm2, differential efficiency of 80%, and characteristic temperature of 150 K have been realised simultaneously in one device.
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InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm
James A. Lott, N. N. Ledentsov, V. M. Ustinov et al. · Electronics Letters · 2000 · 265 citations