InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm

Abstract

Pulsed lasing at 1.3 µm via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The structures are grown directly on GaAs substrates and when fabricated include selectively oxidised AlO current apertures, intracavity metal contacts, and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at room temperature with threshold currents below 2 mA and differential slope efficiencies above 40%.