InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gain

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 592 citations

Engineering, Materials Engineering, Materials Science +17

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov, N. A. Maleev, A. E. Zhukov et al. · Applied Physics Letters · 1999 · 378 citations

Engineering, Electrical Engineering, Materials Science +13

1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

O.B. Shchekin, D.G. Deppe · Applied Physics Letters · 2002 · 350 citations

Engineering, Materials Science, Optics +14

Low-threshold oxide-confined 1.3-μm quantum-dot laser

Gyoungwon Park, O.B. Shchekin, Diana L. Huffaker et al. · IEEE Photonics Technology Letters · 2000 · 285 citations

Engineering, Electrical Engineering, Optoelectronics +14

InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm

James A. Lott, N. N. Ledentsov, V. M. Ustinov et al. · Electronics Letters · 2000 · 265 citations

Engineering, Electrical Engineering, Materials Science +17