Kenichi Nishi

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 589 citations

Optical Materials, Engineering, Optoelectronic Devices +18

1.3 μm photoluminescence from InGaAs quantum dots on GaAs

Richard P. Mirin, J. P. Ibbetson, Kenichi Nishi et al. · Applied Physics Letters · 1995 · 245 citations

Semiconductors, Photonics, Optical Materials +15

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

Hideaki Saito, Kenichi Nishi, I. Ogura et al. · Applied Physics Letters · 1996 · 226 citations

Photonics, Engineering, Physics +11

On-Chip Optical Interconnect

Keishi Ohashi, Kenichi Nishi, Takanori Shimizu et al. · Proceedings of the IEEE · 2009 · 225 citations

On-chip Optical Interconnection, Optical Materials, Engineering +17

Low chirp observed in directly modulated quantum dot lasers

Hirohisa Saito, Kenichi Nishi, A. Kamei et al. · IEEE Photonics Technology Letters · 2000 · 176 citations

Photonics, Quantum Science, Engineering +12