S. Sugou

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 592 citations

Engineering, Materials Engineering, Materials Science +17

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

Hideaki Saito, Kenichi Nishi, I. Ogura et al. · Applied Physics Letters · 1996 · 226 citations

Engineering, Electrical Engineering, Materials Science +16

Low chirp observed in directly modulated quantum dot lasers

Hirohisa Saito, Kenichi Nishi, A. Kamei et al. · IEEE Photonics Technology Letters · 2000 · 177 citations

Natural Sciences, Electrical Engineering, Physics +13

Shape transition of InAs quantum dots by growth at high temperature

Hideaki Saito, Kenichi Nishi, S. Sugou · Applied Physics Letters · 1999 · 176 citations

Natural Sciences, Materials Engineering, Materials Science +13

Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission

Hideaki Saito, Kenichi Nishi, S. Sugou · Applied Physics Letters · 1998 · 175 citations

Engineering, Materials Engineering, Materials Science +17