A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou, +1

Applied Physics Letters

Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +16

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

Hideaki Saito, Kenichi Nishi, I. Ogura, +2

Applied Physics Letters

PhotonicsEngineeringPhysicsCavity QedApplied Physics +9

Low chirp observed in directly modulated quantum dot lasers

Hirohisa Saito, Kenichi Nishi, A. Kamei, +1

IEEE Photonics Technology Letters

PhotonicsQuantum ScienceEngineeringLaser SciencePhysics +10

Shape transition of InAs quantum dots by growth at high temperature

Hideaki Saito, Kenichi Nishi, S. Sugou

Applied Physics Letters

Optical MaterialsEngineeringPyramid ShapeLarge VolumeOptoelectronic Devices +17

Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission

Hideaki Saito, Kenichi Nishi, S. Sugou

Applied Physics Letters

Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertyEmission Energy +17

GaAsSb: A novel material for 1.3 µm VCSELs

T. Anan, Kenichi Nishi, S. Sugou, +3

Electronics Letters

Controlling polarization of quantum-dot surface-emitting lasers by using structurally anisotropic self-assembled quantum dots

Hideaki Saito, Kenichi Nishi, S. Sugou, +1

Applied Physics Letters

Materials ScienceQuantum SciencePhotonicsQuantum PhotonicsEngineering +13

Optical anisotropy in self-assembled InP quantum dots

Mitsuru Sugisaki, Hongwen Ren, Selvakumar V. Nair, +4

Physical review. B, Condensed matter

Optical MaterialsQuantum PhotonicsEngineeringOptical AnisotropyOptoelectronic Devices +16

Zero-field spin quantum beats in charged quantum dots

I. É. Kozin, V. G. Davydov, I. V. Ignatĭev, +7

Physical review. B, Condensed matter

Quantum ScienceSpintronicsPseudospin FormalismQuantum ComputingPhysics +11

Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy

T. Anan, S. Sugou, Kenichi Nishi, +1

Applied Physics Letters

Materials ScienceIi-vi SemiconductorChemical EngineeringEngineeringPhysics +12