Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission

Abstract

Uncapped InGaAs quantum dots (surface quantum dots) on a GaAs substrate emit photoluminescence at a long wavelength of 1.53 μm at room temperature. When the surface dots are covered by a GaAs cap layer, the emission energy of the dots increases by 287 meV. This large energy shift is mainly caused by inducing compressive stress from the cap layer. In segregation on the surface led to greater photoluminescence intensity in the surface quantum dots even at room temperature due to the suppression of nonradiative surface recombination.