Applied Physics Letters · 2002 · 350 citations · 11 references
EngineeringMaterials ScienceOpticsOptoelectronicsSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesQuantum DotsSemiconductor Device MaterialsSemiconductor LasersGainOptical GainOptical Gain In SemiconductorsOptical Gain MaterialsQuantum Dot LasersQuantum Dot Materials
Data are presented on the influence of p-type modulation doping on the gain characteristics of 1.3 μm InAs quantum dot lasers. The improvement in optical gain leads to very high characteristic temperatures for the lasing threshold that reach 161 K in the temperature range between 0 and 80 °C. 1.3 μm ground state lasing is obtained up to a temperature of 167 °C.
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1.3 μm room-temperature GaAs-based quantum-dot laser
Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations
Low-threshold oxide-confined 1.3-μm quantum-dot laser
Gyoungwon Park, O.B. Shchekin, Diana L. Huffaker et al. · IEEE Photonics Technology Letters · 2000 · 285 citations