A. Hoffmann - Concepedia

Author

A. Hoffmann

Also Known As

A Hoffmann, A. HOFFMANN, A. Hoffmann, Achim Hoffmann, Andreas Hoffmann, Axel Hoffmann, Axel Hoffmann Axel Hoffmann, Axel Hoffmann,, Hoffmann, A., Hoffmann, Achim

563

Publications

16.3K

Citations

H-Index

144

Concepts

All Affiliations

Technische Universität Berlin Justus-Liebig-Universität Gießen Otto-von-Guericke University Magdeburg Physico-Technical Institute North Carolina State University

About

A. Hoffmann is an author at Technische Universität Berlin specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	57	231	12.9K
2	Natural Sciences	32	58	3.3K
3	Arts	1	1	21
4	Health Sciences	1	1	12
5	Medicine	1	1	14

A. Hoffmann

253

Publications

13.9K

Citations

H-Index

Page 1

	Year	Citations
Bound exciton and donor–acceptor pair recombinations in ZnO Bertrand Meyer, H. Alves, D.M. Hofmann, physica status solidi (b) Charge ExcitationsOptical MaterialsExcitonic RecombinationsEngineeringBound Exciton	2004	1.6K
Nitrogen-related local vibrational modes in ZnO:N A. Kaschner, U. Haboeck, Martin Straßburg, Applied Physics Letters Materials ScienceNitrogen ConcentrationEngineeringPhysicsNatural Sciences	2002	462
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots R. Heitz, M. J. Veit, N. N. Ledentsov, Physical review. B, Condensed matter	1997	447
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn(OH)2 core-shell structure Huijuan Zhou, H. Alves, D.M. Hofmann, Applied Physics Letters EngineeringExcitonic TransitionColloidal NanocrystalsChemistryWeak Excitonic Emission	2002	316
Zone-boundary phonons in hexagonal and cubic GaN H. Siegle, G. Kaczmarczyk, L. Filippidis, Physical review. B, Condensed matter Hexagonal GanEngineeringPhysicsPhonon BranchesOptical Properties	1997	307
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R. Heitz, A. Kalburge, Qiwei Xie, Physical review. B, Condensed matter Categoryquantum ElectronicsIsland Formation KineticsOptical MaterialsEngineeringOptoelectronic Devices	1998	239
Properties of the yellow luminescence in undoped GaN epitaxial layers D.M. Hofmann, D. Kovalev, G. Steude, Physical review. B, Condensed matter Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceDeep DonorsYellow Luminescence	1995	231
High Si and Ge n-type doping of GaN doping - Limits and impact on stress S. Fritze, A. Dadgar, H. De Witte, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringGan N-type DopingEngineering	2012	194
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers Markus R. Wagner, Gordon Callsen, J. S. Reparaz, Physical Review B EngineeringChemistryElectronic Excited StateDefect ToleranceElectronic Structure	2011	178
Existence of a phonon bottleneck for excitons in quantum dots R. Heitz, H. Born, F. Guffarth, Physical review. B, Condensed matter SemiconductorsQuantum ScienceCategoryquantum ElectronicsCharge ExcitationsEngineering	2001	162

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