Nitrogen-related local vibrational modes in ZnO:N

A. Kaschner, U. Haboeck, Martin Straßburg, +7

Applied Physics Letters

Materials ScienceNitrogen ConcentrationEngineeringPhysicsNatural Sciences +10

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

F. Bertram, T. Riemann, J. Christen, +6

Applied Physics Letters

SemiconductorsMaterials ScienceStrong Impurity IncorporationOptical MaterialsEngineering +12

Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

A. Kaschner, T. Lüttgert, H. Born, +3

Applied Physics Letters

SemiconductorsNitrogen FluctuationsWide-bandgap SemiconductorPhotoluminescenceRecombination Mechanisms +11

Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations

G. Kaczmarczyk, A. Kaschner, Stephanie Reich, +8

Applied Physics Letters

Quantum Lattice SystemEngineeringAcoustic MetamaterialPhysical AcousticOptical Properties +17

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

L. Eckey, U. von Gfug, J. Holst, +9

Journal of Applied Physics

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineering +13

Effect of annealing on the In and N distribution in InGaAsN quantum wells

M. Albrecht, Vincenzo Grillo, T. Remmele, +7

Applied Physics Letters

SemiconductorsQuantum ScienceElectrical EngineeringCategoryquantum ElectronicsEngineering +13

Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy

A. Kaschner, H. Siegle, G. Kaczmarczyk, +6

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsOptical Properties +10

Growth of high quality InGaAsN heterostructures and their laser application

A. Yu. Egorov, D. Bernklau, B. Borchert, +9

Journal of Crystal Growth

Materials ScienceOptical MaterialsEngineeringOptical PropertiesApplied Physics +5

Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN

G. Kaczmarczyk, A. Kaschner, A. Hoffmann, +1

Physical review. B, Condensed matter

Materials ScienceHexagonal GanWide-bandgap SemiconductorEngineeringPhysics +13

Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN

A. Kaschner, A. Hoffmann, C. Thomsen, +6

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorStructural PropertiesPhotoluminescenceOvergrown Gan +13