A. Kaschner

Nitrogen-related local vibrational modes in ZnO:N

A. Kaschner, U. Haboeck, Martin Straßburg et al. · Applied Physics Letters · 2002 · 462 citations

Materials Science, Nitrogen Concentration, Engineering +12

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

F. Bertram, T. Riemann, J. Christen et al. · Applied Physics Letters · 1999 · 142 citations

Semiconductors, Materials Science, Strong Impurity Incorporation +14

Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

A. Kaschner, T. Lüttgert, H. Born et al. · Applied Physics Letters · 2001 · 131 citations

Semiconductors, Nitrogen Fluctuations, Wide-bandgap Semiconductor +13

Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations

G. Kaczmarczyk, A. Kaschner, Stephanie Reich et al. · Applied Physics Letters · 2000 · 98 citations

Quantum Lattice System, Engineering, Acoustic Metamaterial +19

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

L. Eckey, U. von Gfug, J. Holst et al. · Journal of Applied Physics · 1998 · 98 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15