T. Riemann

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

F. Bertram, T. Riemann, J. Christen et al. · Applied Physics Letters · 1999 · 143 citations

Natural Sciences, Materials Engineering, Materials Science +17

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 139 citations

Engineering, Materials Engineering, Materials Science +12

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

A. Dadgar, A. Strittmatter, J. Bläsing et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 128 citations

Engineering, Materials Engineering, Materials Science +17

Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates

A. Strittmatter, Sven Rodt, L. Reißmann et al. · Applied Physics Letters · 2001 · 107 citations

Engineering, Materials Engineering, Materials Science +17

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

A. Dadgar, J. Christen, T. Riemann et al. · Applied Physics Letters · 2001 · 106 citations

Engineering, Materials Engineering, Materials Science +14