J. Christen - Concepedia

Author

J. Christen

Otto-von-Guericke University Magdeburg

Also Known As

Bremers, Christen, J., J Christen, J. Christen, Jürgen Christen Jürgen Christen

Publications

3.5K

Citations

H-Index

Concepts

All Affiliations

Otto-von-Guericke University Magdeburg Technische Universität Berlin Justus-Liebig-Universität Gießen Aixtron (Germany)

About

J. Christen is an author at Otto-von-Guericke University Magdeburg specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	37	3.3K
2	Applied Physics	21	35	3.2K
3	Chemical Engineering	3	3	110
4	Chemistry	2	2	109
5	Natural Sciences	1	1	14

J. Christen

Publications

3.4K

Citations

H-Index

Page 1

	Year	Citations
Bound exciton and donor–acceptor pair recombinations in ZnO Bertrand Meyer, H. Alves, D.M. Hofmann, physica status solidi (b) Charge ExcitationsOptical MaterialsExcitonic RecombinationsEngineeringBound Exciton	2004	1.6K
Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction A. Dadgar, F. Schulze, M. Wienecke, New Journal of Physics SemiconductorsMaterials ScienceElectrical EngineeringMaterials EngineeringToday Epitaxial Growth	2007	138
MOVPE growth of GaN on Si(111) substrates A. Dadgar, M. Poschenrieder, J. Bläsing, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsMovpe GrowthGan Power Device	2002	138
Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si O. Contreras, F. A. Ponce, J. Christen, Applied Physics Letters Materials ScienceScrew DislocationElectrical EngineeringWide-bandgap SemiconductorEngineering	2002	112
Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V-grooved substrates M. Walther, E. Kapon, J. Christen, Applied Physics Letters Optical MaterialsEngineeringCarrier CaptureV-grooved SubstratesOptoelectronic Devices	1992	112
Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer A. Dadgar, J. Christen, T. Riemann, Applied Physics Letters EngineeringOptoelectronic DevicesIngan/gan Multiquantum-well DiodeSemiconductorsAlgan/gan Multilayer	2001	106
Reduction of stress at the initial stages of GaN growth on Si(111) A. Dadgar, M. Poschenrieder, A. Reiher, Applied Physics Letters Materials EngineeringSemiconductorsElectrical EngineeringMaterials ScienceEngineering	2003	103
Optical investigations on excitons bound to impurities and dislocations in ZnO H. Alves, D. Pfisterer, A. Zeuner, Optical Materials Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringPhotoluminescence	2003	89
MOVPE growth of high-quality AlN A. Dadgar, A. Krost, J. Christen, Journal of Crystal Growth Materials EngineeringMaterials ScienceAluminium NitrideEngineeringCrystal Growth Technology	2006	84
On the nature of the 3.41 eV luminescence in hexagonal GaN Stefan Fischer, G. Steude, D.M. Hofmann, Journal of Crystal Growth Hexagonal GanWide-bandgap SemiconductorEngineeringPhysicsApplied Physics	1998	79

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