J. Christen

Bound exciton and donor–acceptor pair recombinations in ZnO

Bertrand Meyer, H. Alves, D.M. Hofmann et al. · physica status solidi (b) · 2004 · 1.6K citations

Charge Excitations, Optical Materials, Excitonic Recombinations +17

Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

A. Dadgar, F. Schulze, M. Wienecke et al. · New Journal of Physics · 2007 · 138 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +14

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 138 citations

Electrical Engineering, Engineering, Applied Physics +2

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

O. Contreras, F. A. Ponce, J. Christen et al. · Applied Physics Letters · 2002 · 112 citations

Materials Science, Screw Dislocation, Electrical Engineering +12

Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V-grooved substrates

M. Walther, E. Kapon, J. Christen et al. · Applied Physics Letters · 1992 · 112 citations

Optical Materials, Engineering, Carrier Capture +20