MOVPE growth of GaN on Si(111) substrates

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 330 citations

Engineering, Materials Engineering, Materials Science +17

Physical Origins of Intrinsic Stresses in Volmer–Weber Thin Films

Jerrold A. Floro, Eric Chason, R. C. Cammarata et al. · MRS Bulletin · 2002 · 307 citations

Natural Sciences, Materials Science, Physics +16

GaN-based optoelectronics on silicon substrates

A. Krost, A. Dadgar · Materials Science and Engineering B · 2002 · 296 citations

Engineering, Materials Engineering, Materials Science +14

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa et al. · Journal of Crystal Growth · 1993 · 273 citations

Engineering, Materials Engineering, Materials Science +13

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

Lucia Romano, Chris G. Van de Walle, Joel W. Ager et al. · Journal of Applied Physics · 2000 · 245 citations

Engineering, Materials Engineering, Materials Science +17