The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

The Use of Metalorganics in the Preparation of Semiconductor Materials

H. M. Manasevit, F. M. Erdmann, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 296 citations

Engineering, Chemistry, Materials Science +12

Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

Tetsuya Takeuchi, Hiroshi Amano, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1991 · 188 citations

Natural Sciences, Materials Engineering, Materials Science +16

Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 20) and (0001) Sapphire Substrates

Hiroshi Amano, Kazumasa Hiramatsu, Isamu Akasaki · Japanese Journal of Applied Physics · 1988 · 157 citations

Engineering, Materials Engineering, Materials Science +17

Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships

Mizuho Morita, Seiji Isogai, N. Shimizu et al. · Japanese Journal of Applied Physics · 1981 · 81 citations

Natural Sciences, Materials Engineering, Materials Science +17