The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer - Concepedia

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The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

271

Citations

4

References

1993

Year

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa, Hiroshi Amano, K. Hiramatsu, Isamu Akasaki

Journal of Crystal Growth

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceSingle Crystalline GanOptoelectronicsIntermediate Layer

References

	Year	Citations

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