K. Hiramatsu - Concepedia

Author

K. Hiramatsu

Also Known As

HIRAMATSU, K, HIRAMATSU, Kazumasa, Hiramatsu, K., Hiramatsu, Kotaro, Julia Gala de Pablo, K Hiramatsu, K. HIRAMATSU, K. Hiramatsu, Kaoru Hiramatsu, Keiichi Hiramatsu

293

Publications

6.7K

Citations

H-Index

122

Concepts

All Affiliations

Nagoya University The University of Tokyo Mie University University of California, Los Angeles Japan Science and Technology Agency

About

K. Hiramatsu is an author at Nagoya University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	70	4.7K
2	Natural Sciences	9	9	222
3	Medicine	5	5	299
4	Health Sciences	1	1	25
5	Social Sciences	1	1	21

K. Hiramatsu

Publications

6.3K

Citations

H-Index

Page 1

	Year	Citations
Intelligent Image-Activated Cell Sorting Nao Nitta, Takeaki Sugimura, Akihiro Isozaki, Cell Machine VisionImage AnalysisEngineeringCellular Neural NetworkPattern Recognition	2018	525
Characterization of Staphylococci with Reduced Susceptibilities to Vancomycin and Other Glycopeptides Fred C. Tenover, M. Lancaster, Christine D. Steward, Journal of Clinical Microbiology	1998	377
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE K. Hiramatsu, Shintaro Itoh, Hiroshi Amano, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	1991	296
Schottky barrier on <i>n</i>-type GaN grown by hydride vapor phase epitaxy Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu, Applied Physics Letters Materials EngineeringSemiconductor TechnologyElectrical EngineeringSchottky Barrier ContactEngineering	1993	288
Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu, Journal of Applied Physics SemiconductorsDeep-level Transient SpectroscopyElectrical EngineeringWide-bandgap SemiconductorDeep Levels	1994	287
Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth K. Hiramatsu, K. Nishiyama, Atsushi Motogaito, physica status solidi (a) Materials ScienceEpitaxial GrowthElo GanEngineeringCrystalline Defects	1999	283
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa, Journal of Crystal Growth Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineering	1993	271
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer Theeradetch Detchprohm, K. Hiramatsu, Hiroshi Amano, Applied Physics Letters Materials EngineeringSemiconductorsElectrical EngineeringMaterials ScienceEngineering	1992	224
Raman image-activated cell sorting Nao Nitta, Takanori Iino, Akihiro Isozaki, Nature Communications EngineeringMicroscopySurface-enhanced Raman ScatteringBiomedical EngineeringLight Scattering Spectroscopy	2020	193
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization K. Hiramatsu, Y. Kawaguchi, M. Shimizu, MRS Internet Journal of Nitride Semiconductor Research	1997	160

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