Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

D. K. Wickenden, K. R. Faulkner, R W Brander et al. · Journal of Crystal Growth · 1971 · 85 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial Growth of Undoped and Mg-Doped GaN

Masatoshi Sano, M. Aoki · Japanese Journal of Applied Physics · 1976 · 65 citations

Engineering, Materials Engineering, Materials Science +17

Zn related electroluminescent properties in MOVPE grown GaN

Hiroshi Amano, K. Hiramatsu, M. Kito et al. · Journal of Crystal Growth · 1988 · 34 citations

Engineering, Materials Engineering, Materials Science +14