Hiroshi Amano - Concepedia

Author

Hiroshi Amano

Meijo University ORCID

Also Known As

Amano, H., Amano, Hiroshi, H AMANO, H Amano, H, Amano, H. AMANO, H. Amano, H. Amano H. Amano, HIROSHI AMANO, Han, Jung

1.7K

Publications

41.3K

Citations

H-Index

273

Concepts

All Affiliations

Meijo University Nagoya University Chiba University Linköping University National Institute for Materials Science

About

Hiroshi Amano is an author at Meijo University specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	76	450	32.1K
2	Natural Sciences	23	54	1.6K
3	Medicine	13	15	816
4	Education	2	2	147
5	Health Sciences	2	2	361

Hiroshi Amano

602

Publications

38.4K

Citations

H-Index

Page 1

	Year	Citations
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideHigh Quality Gan	1986	2.2K
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) Hiroshi Amano, M. Kito, Kazumasa Hiramatsu, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsP-type Conduction	1989	1.9K
The emergence and prospects of deep-ultraviolet light-emitting diode technologies Michael Kneissl, Tae‐Yeon Seong, Jung Han, Nature Photonics White OledElectrical EngineeringSolid-state LightingEngineeringApplied Physics	2019	1.2K
The 2018 GaN power electronics roadmap Hiroshi Amano, Yannick Baines, Edward Beam, Journal of Physics D Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2018	1.2K
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells Tetsuya Takeuchi, Shigetoshi Sota, Maki Katsuragawa, Japanese Journal of Applied Physics Wide-bandgap SemiconductorEngineeringPiezoelectric FieldSemiconductor NanostructuresNanoelectronics	1997	1.2K
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE Isamu Akasaki, Hiroshi Amano, Yasuo Koide, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineering	1989	687
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, Nature Materials SemiconductorsMaterials ScienceAluminium NitrideEngineeringApplied Physics	2006	682
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters Isamu Akasaki Isamu Akasaki, Hiroshi Amano Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	1997	654
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect Tetsuya Takeuchi, Christian Wetzel, Shigeo Yamaguchi, Applied Physics Letters Wide-bandgap SemiconductorEngineeringPiezoelectric FieldNanoelectronicsQuantum Materials	1998	614
Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorTheoretical StudyCrystal Orientation DependenceCrystalline Defects	2000	511

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