Applied Physics Letters · 1986 · 2.2K citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand Emission SpectraBuffer LayersCrystalline StructureEpitaxial Growth Of Wide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGrowth Factor DependenceMetalorganic Vapor Phase Epitaxy
The study reports atmospheric‑pressure metalorganic vapor‑phase epitaxy of high‑quality GaN on sapphire (0001) substrates. The authors investigate how growth conditions affect crystalline quality. Using AlN buffer layers, GaN thin films with optically flat, crack‑free surfaces are grown, exhibiting a narrowest X‑ray rocking curve of 2.70′ (0006) and 1.86′ (202̄4) and strong near‑band‑edge photoluminescence.
Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN buffer layers, GaN thin films with optically flat surfaces free from cracks are successfully grown. The narrowest x-ray rocking curve from the (0006) plane is 2.70′ and from the (202̄4) plane is 1.86′. Photoluminescence spectra show strong near band edge emission. The growth condition dependence of crystalline quality is also studied.
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Mechanism of Yellow Luminescence in GaN
T. Ogino, Masaharu Aoki · Japanese Journal of Applied Physics · 1980 · 684 citations