Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

TLDR

The study reports atmospheric‑pressure metalorganic vapor‑phase epitaxy of high‑quality GaN on sapphire (0001) substrates. The authors investigate how growth conditions affect crystalline quality. Using AlN buffer layers, GaN thin films with optically flat, crack‑free surfaces are grown, exhibiting a narrowest X‑ray rocking curve of 2.70′ (0006) and 1.86′ (202̄4) and strong near‑band‑edge photoluminescence.

Abstract

Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN buffer layers, GaN thin films with optically flat surfaces free from cracks are successfully grown. The narrowest x-ray rocking curve from the (0006) plane is 2.70′ and from the (202̄4) plane is 1.86′. Photoluminescence spectra show strong near band edge emission. The growth condition dependence of crystalline quality is also studied.