Nobuhiko Sawaki

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Materials Engineering, Materials Science, Electrical Engineering +15

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 687 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Materials Science, Materials Engineering, Engineering +6

Schottky barrier on <i>n</i>-type GaN grown by hydride vapor phase epitaxy

Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu et al. · Applied Physics Letters · 1993 · 288 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +9

Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods

Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu et al. · Journal of Applied Physics · 1994 · 287 citations

Semiconductors, Deep-level Transient Spectroscopy, Electrical Engineering +11