Kazumasa Hiramatsu

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 1.9K citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 687 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 410 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +5

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Materials Science, Materials Engineering, Engineering +6

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

Hideto Miyake, Chia‐Hung Lin, Kenta Tokoro et al. · Journal of Crystal Growth · 2016 · 311 citations · Full text