Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

Engineering, Materials Engineering, Materials Science +17

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva et al. · Applied Physics Letters · 1997 · 651 citations

Engineering, Materials Engineering, Materials Science +17

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1997 · 470 citations

Engineering, Electrical Engineering, Materials Science +17

Defect structure in selectively grown GaN films with low threading dislocation density

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1997 · 413 citations

Engineering, Materials Engineering, Materials Science +17

High-performance (Al,Ga)N-based solar-blind ultraviolet <i>p–i–n</i> detectors on laterally epitaxially overgrown GaN

Giacinta Parish, S. Keller, P. Kozodoy et al. · Applied Physics Letters · 1999 · 318 citations

Engineering, Electrical Engineering, Materials Science +17