Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) - Concepedia

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Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

410

Citations

29

References

2000

Year

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi, H. Mizutani, Mitsuhisa Narukawa, Atsushi Motogaito, Hideto Miyake, Yasushi Iyechika, Takayoshi Maeda

Journal of Crystal Growth

Materials EngineeringSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device

References

	Year	Citations

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