Mitsuhisa Narukawa

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 410 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +5

Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE

Reina Miyagawa, Mitsuhisa Narukawa, Bei Ma et al. · Journal of Crystal Growth · 2008 · 34 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +9

Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

Dabing Li, Bei Ma, Reina Miyagawa et al. · Journal of Crystal Growth · 2009 · 20 citations

Electrical Engineering, Engineering, Applied Physics +4

Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask

H. Naoi, Mitsuhisa Narukawa, Hideto Miyake et al. · Journal of Crystal Growth · 2002 · 10 citations

Wide-bandgap Semiconductor, Selected-area Si, Electrical Engineering +6

Growth of crack-free AlGaN on selective-area-growth GaN

Hideto Miyake, Nobuhisa Masuda, Y. Ogawahara et al. · Journal of Crystal Growth · 2008 · 10 citations

Materials Engineering, Electrical Engineering, Engineering +5