H. Naoi

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. D. C. King, T. D. Veal, C. F. McConville et al. · Applied Physics Letters · 2007 · 106 citations · Full text

Semiconductors, Surface Characterization, Engineering +14

In adlayers on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>c</mml:mi></mml:math>-plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy

T. D. Veal, P. D. C. King, P. H. Jefferson et al. · Physical Review B · 2007 · 73 citations

Wide-bandgap Semiconductor, Engineering, Valence Band Xps +18

MOCVD growth of InAsN for infrared applications

H. Naoi, Yoshiki Naoi, Shiro Sakai · Solid-State Electronics · 1997 · 67 citations

Mocvd Growth, Applied Physics, Compound Semiconductor +1

Polarity determination of InN by wet etching

Daisuke Muto, Tsutomu Araki, H. Naoi et al. · physica status solidi (a) · 2005 · 48 citations

Materials Science, Materials Engineering, Dislocation Densities +15

Growth of Crack-Free and High-Quality AlGaN with High Al Content Using Epitaxial AlN (0001) Films on Sapphire

Yoshihiro Kida, T. Shibata, H. Naoi et al. · physica status solidi (a) · 2002 · 46 citations

Materials Science, Materials Engineering, High-quality Algan +12