Yoshiki Naoi

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 469 citations

Engineering, Materials Engineering, Materials Science +17

A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE

Shigeki Sakai, T Wang, Y. Morishima et al. · Journal of Crystal Growth · 2000 · 119 citations

Engineering, Materials Engineering, Materials Science +16

Role of Dislocation in InGaN Phase Separation

Tomoya Sugahara, Maosheng Hao, Tao Wang et al. · Japanese Journal of Applied Physics · 1998 · 116 citations

Engineering, Materials Engineering, Materials Science +17

Copper gate AlGaN/GaN HEMT with low gate leakage current

Jin‐Ping Ao, Daigo Kikuta, Naotaka Kubota et al. · IEEE Electron Device Letters · 2003 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method

Satoshi Kurai, Yoshiki Naoi, Toshimitsu Abe Toshimitsu Abe et al. · Japanese Journal of Applied Physics · 1996 · 69 citations

Engineering, Materials Engineering, Materials Science +15