Yoshiki Naoi

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 466 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Photoluminescence +14

A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE

Shigeki Sakai, T Wang, Y. Morishima et al. · Journal of Crystal Growth · 2000 · 118 citations

Materials Science, Materials Engineering, Electrical Engineering +9

Role of Dislocation in InGaN Phase Separation

Tomoya Sugahara, Maosheng Hao, Tao Wang et al. · Japanese Journal of Applied Physics · 1998 · 116 citations

Engineering, Mechanics Of Materials, Ingan Phase Separation +18

Copper gate AlGaN/GaN HEMT with low gate leakage current

Jin‐Ping Ao, Daigo Kikuta, Naotaka Kubota et al. · IEEE Electron Device Letters · 2003 · 74 citations

Materials Science, Semiconductors, Electrical Engineering +11

Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method

Satoshi Kurai, Yoshiki Naoi, Toshimitsu Abe Toshimitsu Abe et al. · Japanese Journal of Applied Physics · 1996 · 69 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15