Tomoya Sugahara

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 466 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Photoluminescence +14

Role of Dislocation in InGaN Phase Separation

Tomoya Sugahara, Maosheng Hao, Tao Wang et al. · Japanese Journal of Applied Physics · 1998 · 116 citations

Engineering, Mechanics Of Materials, Ingan Phase Separation +18

Large Schottky barriers for Ni/p-GaN contacts

Kenji Shiojima, Tomoya Sugahara, Shiro Sakai · Applied Physics Letters · 1999 · 65 citations

Semiconductors, Large Schottky Barriers, Electrical Engineering +12

Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire

Petr G. Eliseev, Marek Osiński, Jinhyun Lee et al. · Journal of Electronic Materials · 2000 · 63 citations

Photoluminescence, Engineering, Physics +9

Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition

Hisao Satô, Tomoya Sugahara, Yoshiki Naoi et al. · Japanese Journal of Applied Physics · 1998 · 46 citations

Materials Engineering, Materials Science, Aluminium Nitride +13