Petr G. Eliseev

“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources

Petr G. Eliseev, P. Perlin, Jinhyun Lee et al. · Applied Physics Letters · 1997 · 541 citations

Engineering, Gaussian Shape, Luminescence Property +16

Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

Petr G. Eliseev, H. Li, A. Stintz et al. · Applied Physics Letters · 2000 · 203 citations

Engineering, Inversion Threshold, Laser Applications +16

Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes

P. Perlin, Marek Osiński, Petr G. Eliseev et al. · Applied Physics Letters · 1996 · 169 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

A. A. Ukhanov, A. Stintz, Petr G. Eliseev et al. · Applied Physics Letters · 2004 · 110 citations

Photonics, Engineering, Optical Properties +10

Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

Petr G. Eliseev, H. Li, T. Liu et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2001 · 107 citations

Photonics, Quantum Science, Quantum Photonics +12