Petr G. Eliseev - Concepedia

Author

Petr G. Eliseev

Also Known As

P . G. Eliseev, P G Eliseev, P. Eliseev, P. G. ELISEEV, P. G. Eliseev, P.G. Eliseev, Petr Eliseev, Petr G Eliseev, Petr G. Eliseev, Petr. G. Eliseev

203

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

University of New Mexico P.N. Lebedev Physical Institute of the Russian Academy of Sciences Tokushima University Instituto Politécnico Nacional Tecnológico Nacional de México

About

Petr G. Eliseev is an author at University of New Mexico specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	45	2.5K
2	Applied Physics	23	37	2.3K
3	Electrical Engineering	12	13	1.2K
4	Natural Sciences	3	3	132
5	Materials Science	3	3	185

Petr G. Eliseev

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources Petr G. Eliseev, P. Perlin, Jinhyun Lee, Applied Physics Letters EngineeringGaussian ShapeLuminescence PropertyBand-tail StatesOptical Properties	1997	541
Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes Petr G. Eliseev, H. Li, A. Stintz, Applied Physics Letters EngineeringInversion ThresholdLaser ApplicationsLaser MaterialElementary Dipole	2000	203
Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes P. Perlin, Marek Osiński, Petr G. Eliseev, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesSemiconductors	1996	169
Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers A. A. Ukhanov, A. Stintz, Petr G. Eliseev, Applied Physics Letters PhotonicsEngineeringOptical PropertiesLinewidth Enhancement FactorQd Laser	2004	110
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers Petr G. Eliseev, H. Li, T. Liu, IEEE Journal of Selected Topics in Quantum Electronics PhotonicsQuantum ScienceQuantum PhotonicsElectrical EngineeringEngineering	2001	107
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells P. Perlin, V. Iota, B. A. Weinstein, Applied Physics Letters Optical MaterialsEngineeringPrimary Luminescence PeakDifferent TypesLuminescence Property	1997	95
The red σ2/kT spectral shift in partially disordered semiconductors Petr G. Eliseev Journal of Applied Physics EngineeringOptoelectronic DevicesDisordered SemiconductorsLuminescence PropertySemiconductor Nanostructures	2003	86
Thermal activation of excitons in asymmetric InAs dots-in-a-well InxGa1−xAs∕GaAs structures T.V. Torchynska, J.L. Casas Espínola, L. Borkovska, Journal of Applied Physics Categoryquantum ElectronicsOptical MaterialsExciton Thermal ActivationEngineeringExcitation Energy Transfer	2007	83
Orientation dependence of the optical properties in InAs quantum-dash lasers on InP A. A. Ukhanov, R. H. Wang, Thomas J. Rotter, Applied Physics Letters Optical PumpingPhotonicsQuantum ScienceOptical MaterialsQuantum Photonics	2002	81
Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells T.V. Torchynska, J.L. Casas Espínola, Petr G. Eliseev, physica status solidi (a) SemiconductorsCategoryquantum ElectronicsGround StateElectronic DevicesPl Temperature	2003	79

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