Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

Abstract

Emission spectra and modal optical gain are investigated in ultralow-threshold MBE-grown InAs-InGaAs quantum dot (QD) structures. The record lowest room-temperature inversion current is found to be /spl sim/13 A cm/sup -2/. The rate-equation model is proposed describing the optical gain related to the ground-state (GS) transitions in QDs. The ground-state gain goes to the maximum value that corresponds to the total inversion of available levels. The gain cross section for the GS emission is estimated as /spl sim/7/spl times/10/sup -15/ cm/sup 2/.