L. F. Lester

Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In _0.15 Ga _0.85 As quantum well

G.T. Liu, A. Stintz, H. Li et al. · Electronics Letters · 1999 · 477 citations

Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

T.C. Newell, David Bossert, A. Stintz et al. · IEEE Photonics Technology Letters · 1999 · 278 citations

Photonics, Quantum Science, Quantum Photonics +11

Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

L. F. Lester, A. Stintz, H. Li et al. · IEEE Photonics Technology Letters · 1999 · 227 citations

Quantum Photonics, Optical Materials, Saturated Modal Gain +20

Room-temperature operation of InAs quantum-dash lasers on InP [001]

Ruolin Wang, A. Stintz, P.M. Varangis et al. · IEEE Photonics Technology Letters · 2001 · 211 citations

Quantum Photonics, Engineering, Laser Science +20

Ga Sb ∕ Ga As type II quantum dot solar cells for enhanced infrared spectral response

Ramesh B. Laghumavarapu, A. Moscho, Arezou Khoshakhlagh et al. · Applied Physics Letters · 2007 · 208 citations

Ii-vi Semiconductor, Electrical Engineering, Photoluminescence +13