Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao, +7

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorSemiconductor TechnologyPhotoluminescenceDislocation SpacingEngineering +12

Role of Dislocation in InGaN Phase Separation

Tomoya Sugahara, Maosheng Hao, Tao Wang, +4

Japanese Journal of Applied Physics

EngineeringMechanics Of MaterialsIngan Phase SeparationNanoelectronicsPhase Separation +16

Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition

Doo‐Hyeb Youn, M. Lachab, Maosheng Hao, +4

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringElectrical EngineeringP-type ActivationEngineering +12

Porous GaAs formed by a two-step anodization process

Maosheng Hao, Hideo Uchida, Chunlin Shao, +3

Journal of Crystal Growth

Materials EngineeringMaterials ScienceEngineeringApplied PhysicsPorous Gaas +4

Ohmic Contact to P-Type GaN

Doo‐Hyeb Youn, Maosheng Hao, Hisao Satô, +3

Japanese Journal of Applied Physics

Materials ScienceSemiconductorsElectrical EngineeringNew Metal SchemeEngineering +8

Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures

Masahiro Sakai, Takashi Egawa, Maosheng Hao, +1

Japanese Journal of Applied Physics

Materials EngineeringSemiconductorsElectrical EngineeringMaterials ScienceEngineering +10

Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, +2

Japanese Journal of Applied Physics

Aluminium NitrideEngineeringCrystal Growth TechnologyChemistryChemical Engineering +14

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, +4

Journal of Crystal Growth

Aluminium NitridePhotoluminescenceEngineeringApplied PhysicsAluminum Gallium Nitride +5

Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique

Jie Wang, S. Tottori, Hisao Satô, +5

Japanese Journal of Applied Physics

Materials ScienceSio 2Electrical EngineeringSublimation TechniqueEngineering +9

Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition

Hisao Satô, Tomoya Sugahara, Maosheng Hao, +5

Japanese Journal of Applied Physics

Materials ScienceWide-bandgap SemiconductorEngineeringSurface ScienceApplied Physics +10